Since in forward bias the holes in P side carry electrons from N type to P type (electrons within a semiconductor + electrons from the external source such as battery), why shouldn’t they take the electrons coming from the battery source from P type to N type in reverse bias, instead the explanations say it causes a depletion layer to increase.
I see the number of carriers inside a semiconductor become irrelevant in this situation, because electrons will still get pumped into the semiconductor with battery’s electrons.
In: Physics
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